Embedded Files
Patents
A Radiation Dosimeter Based on AlGaN/GaN High Electron Mobility Transistor (HEMT) Structure,
Inventors: Vikas Pandey, Naresh Jingar, Surendra Singh Barala, Satyajit Sahu, Mahesh KumarApplicants: DRDO & IIT JodhpurIndian patent Application No: 202511021069 (08/03/2025)Publications
IoT-Enabled hBN/AlGaN/GaN High Electron Mobility Transistor for Carbon Dioxide Monitoring,
Vikas Pandey, Ankur Gupta, Sudhiranjan Tripathy, and Mahesh Kumar 2024 IEEE Sensors, Kobe, Japan, 2024, pp. 1-4, DOI: 10.1109/SENSORS60989.2024.10784655Ultrasensitive Detection of Hg2+ Ions with CVD Grown MoS2 Functionalized MgZnO/CdZnO HEMT,
Sumit Chaudhary, Brahmadutta Mahapatra, Vikas Pandey, Chandrabhan Patel, Mayank Dubey, Mahesh Kumar, and Shaibal Mukherjee IEEE Sensors Journal, DOI: 10.1109/JSEN.2024.3504842Pd/AlGaN/GaN HEMT-based room temperature hydrogen gas sensor,
Vikas Pandey, Amit Kumar, Ahmed S Razeen, Ankur Gupta, Sudhiranjan Tripathy, and Mahesh Kumar IEEE Sensors Journal, 2024, 24,24, pp 40409-40416, DOI: 10.1109/JSEN.2024.3487877Room Temperature Operated Flexible La-ZnO/MWCNTs Sensor for ppb Level Carbon Monoxide Detection
Gulshan Verma, Vikas Pandey, Monsur Islam, Mahesh Kumar, Ankur GuptaJournal of Micromechanics and Microengineering, 2023, 33 095003 (July 2023), DOI: 10.1088/1361-6439/ace4d5Recent progress on Group III-nitride nanostructures-based Gas Sensors
Nipun Sharma, Vikas Pandey, Ankur Gupta, Swee Tiam Tan, Sudhiranjan Tripathy, Mahesh Kumar Journal of Materials Chemistry C, 2022, 10, 12157-12190 (Aug 2022), DOI: 10.1039/D2TC02103JNon-Dynamic Power Reduction Techniques for Digital VLSI Circuits: Classification and Review
Anupam Kumari, Vikas Pandey IEEE Explore, International Conference on Computational Performance Evaluation (ComPE-2020), DOI: 10.1109/ComPE49325.2020.9200156Analysis of Stack Gate Oxide Nanogap Silicon on Nothing (SON) for Biosensing Application
Vikas Pandey, Nelson Khuraijam, Pranab Kishore Dutta SSRN Electronic Journal, 5th International Conference on Computers and Management Skills (ICCM), DOI: 10.2139/ssrn.3517283BER performance simulation in a multi-user MIMO TAS/MRC Nakagami-m channel using BPSK, QPSK and QAM
Vikas Pandey, Neeraj Kumar Singh IEEE, International Conference on Communication and Signal Processing (ICCSP), 2014 ISBN: 978- 1-4799-3357-0, DOI: 10.1109/ICCSP.2014.6950098Conferences attended
Hexagonal Boron Nitride Functionalized AlGaN/GaN High Electron Mobility Transistor for Enhanced Carbon Dioxide Sensing (Poster),
2024 MRS Fall Meeting & Exhibit, Boston, Massachusetts, USA, 3 December, 2024IoT-Enabled hBN/AlGaN/GaN High Electron Mobility Transistor for Carbon Dioxide Monitoring (Oral),
2024 IEEE Sensors Conference, Kobe, Japan., 20-23 October, 2024Hexagonal Boron Nitride AlGaN/GaN HEMT based Carbon Dioxide Sensor (Poster),
(ACS Engineering best poster award)
IUMRS-ICA 2022, IIT Jodhpur, December 19-23, 2022Enhanced sensing performance of MoS2 functionalized AlGaN/GaN HEMT for NO2 gas sensing (Poster),
XXI International Workshop on Physics of Semiconductor Devices: IWPSD, Delhi (Dec 2021)Graphitic Carbon Nitride functionalized AlGaN/GaN HEMT based Hydrogen Sensor (Oral),
3rd Indian Material Conclave - MRSI, IIT Madras, December 20-23, 2021III-Nitride based AlGaN/GaN HEMT sensor for Mercury (II) Ion Detection under UV illumination (Oral),
3rd Indian Material Conclave - MRSI, IIT Madras, December 20-23, 2021Google Sites
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