Updates

Filed an Indian patent for our work in radiation sensing technology (March 2025)

📌 Patent Title: "A Radiation Dosimeter Based on AlGaN/GaN High Electron Mobility Transistor (HEMT) Structure" 

📌 Application No.: 202511021069
📌 Applicants: DRDO & IIT Jodhpur
📌 Inventors: Vikas Pandey, Naresh Jingar, Surendra Singh Barala, Satyajit Sahu, Mahesh Kumar

Published in IEEE Sensors Journal (November 2024)

Ultrasensitive Detection of Hg2+ Ions with CVD Grown MoS2 Functionalized MgZnO/CdZnO HEMT,

Sumit Chaudhary, Brahmadutta Mahapatra, Vikas Pandey, Chandrabhan Patel, Mayank Dubey, Mahesh Kumar, and Shaibal Mukherjee

DOI: 10.1109/JSEN.2024.3504842

Published in IEEE Sensors Journal (October 2024)

Pd/AlGaN/GaN HEMT-based room temperature hydrogen gas sensor,

Vikas Pandey, Amit Kumar, Ahmed S Razeen, Ankur Gupta, Sudhiranjan Tripathy, and Mahesh Kumar 

DOI: 10.1109/JSEN.2024.3487877

Presented at 2024 IEEE Sensors Conference, Kobe, Japan. (October 2024)

IoT-Enabled hBN/AlGaN/GaN High Electron Mobility Transistor for Carbon Dioxide Monitoring,

Vikas Pandey, Ankur Gupta, Sudhiranjan Tripathy, Mahesh Kumar

DOI: 10.1109/SENSORS60989.2024.10784655

Published in Journal of Micromechanics and Microengineering  (July 2023)

Room Temperature Operated Flexible La-ZnO/MWCNTs Sensor for ppb Level Carbon Monoxide Detection,

Gulshan Verma, Vikas Pandey, Monsur Islam, Mahesh Kumar, Ankur Gupta

DOI: https://dx.doi.org/10.1088/1361-6439/ace4d5

Happy to announce that I have received prestigious Prime Minister's Research Fellowship from the Ministry of Education, India for the tenure Jan 2022 to Feb 2025.